Luminescence flashes induced by microwave radiation in undoped GaAs quantum wells

被引：4

作者：

Baskin, I. ^{[1
]}

Ashkinadze, B. M. ^{[1
]}

Cohen, E. ^{[1
]}

Pfeiffer, L. N. ^{[2
]}

机构：

[1] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 19期

关键词：

aluminium compounds; electron traps; excitons; gallium arsenide; hole traps; III-V semiconductors; localised states; photoconductivity; photoexcitation; photoluminescence; semiconductor quantum wells; spectral line intensity; CYCLOTRON-RESONANCE; ELECTRIC-FIELD; SEMICONDUCTORS; PHOTOLUMINESCENCE; EXCITONS; CARRIERS; KINETICS; STORAGE; HOLES;

D O I：

10.1103/PhysRevB.79.195325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bright flashes of exciton emission are observed in photoexcited, undoped GaAs/AlGaAs quantum wells under pulsed microwave (36 GHz) irradiation. The flash intensity is in the range of 10-100 times the steady-state photoluminescence intensity with a decay time of (1-10)x10(-8) s (depending on the applied microwave power and photoexcitation). These observations indicate a reservoir of long-lived carriers that is formed at low temperature due to localization of photogenerated electrons and holes at spatially separated shallow traps. Microwave-heated electrons activate the localized carriers into free states by means of avalanche impact ionization. This gives rise to rapid exciton formation with subsequent luminescence flash. A detailed model based on the coupled rate equations for free electrons, excitons and localized electrons (holes) is presented.

引用

页数：5

共 28 条

[1]

AKIMOV AV, 1993, SEMICONDUCTORS+, V27, P171

[2]

AKIMOV AV, 1993, FIZ TEKH POLUPROV, V27, P314

[3] MICROWAVE MODULATION OF EXCITON LUMINESCENCE IN GAAS/ALXGA1-XAS QUANTUM-WELLS [J].

ASHKINADZE, BM ;

COHEN, E ;

RON, A ;

PFEIFFER, L .

PHYSICAL REVIEW B, 1993, 47 (16) :10613-10618

[4] Electron-assisted exciton transfer and long-lived electrons and holes in GaAs/AlxGa1-xAs quantum wells [J].

Ashkinadze, BM ;

Tsidilkovski, E ;

Linder, E ;

Cohen, E ;

Ron, A .

PHYSICAL REVIEW B, 1996, 54 (12) :8728-8736

[5] FREE-CARRIER EFFECT ON EXCITON DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELLS [J].

ASHKINADZE, BM ;

LINDER, E ;

COHEN, E ;

RON, A ;

PFEIFFER, LN .

PHYSICAL REVIEW B, 1995, 51 (03) :1938-1941

[6] Coupled 2D electron-exciton system under microwave irradiation [J].

Ashkinadze, BM ;

Linder, E ;

Cohen, E ;

Pfeiffer, LN .

8TH CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS-8), 2004, :514-517

[7]

ASHKINADZE BM, 1990, SOV PHYS-SOLID STATE, V25, P555

[8]

ASHKINADZE BM, 1990, FIZ TEKH POLUPROV, V24, P883

[9] PARTICLE LOCALIZATION AND PHONON SIDE-BAND IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].

BRENER, I ;

OLSZAKIER, M ;

COHEN, E ;

EHRENFREUND, E ;

RON, A ;

PFEIFFER, L .

PHYSICAL REVIEW B, 1992, 46 (12) :7927-7930

[10] OPTICAL SPECTROSCOPY OF A 2-DIMENSIONAL ELECTRON-GAS NEAR THE METAL-INSULATOR-TRANSITION [J].

FINKELSTEIN, G ;

SHTRIKMAN, H ;

BARJOSEPH, I .

PHYSICAL REVIEW LETTERS, 1995, 74 (06) :976-979

← 1 2 3 →