Disordered crystals from first principles II: Transport coefficients

被引:4
|
作者
Kuehne, Thomas D. [1 ]
Heske, Julian [1 ]
Prodan, Emil [2 ]
机构
[1] Univ Paderborn, Dept Chem, Paderborn, Germany
[2] Yeshiva Univ, Dept Phys, New York, NY 10033 USA
基金
欧洲研究理事会; 美国国家科学基金会;
关键词
INTRINSIC CARRIER DENSITY; TEMPERATURE-DEPENDENCE; SILICON; LOCALIZATION; ENERGY; GAP;
D O I
10.1016/j.aop.2020.168290
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This is the second part of a project on the foundations of first-principle calculations of the electron transport in crystals at finite temperatures, aiming at a predictive first-principles platform that combines ab-initio molecular dynamics (AIMD) and a finite-temperature Kubo-formula with dissipation for thermally disordered crystalline phases. The latter are encoded in an ergodic dynamical system (Omega, G, dP), where Omega is the configuration space of the atomic degrees of freedom, G is the space group acting on Omega and dP is the ergodic Gibbs measure relative to the G-action. We first demonstrate how to pass from the continuum Kohn-Sham theory to a discrete atomic-orbitals based formalism without breaking the covariance of the physical observables w.r.t. (Omega, G, dP). Then we show how to implement the Kubo-formula, investigate its self-averaging property and derive an optimal finite-volume approximation for it. We also describe a numerical innovation that made possible AIMD simulations with longer orbits and elaborate on the details of our simulations. Lastly, we present numerical results on the transport coefficients of crystal silicon at different temperatures. (C) 2020 Elsevier Inc. All rights reserved.
引用
收藏
页数:27
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