Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats

被引：55
|
作者：
Lauermann, M. [1 ]
Palmer, R. [1 ]
Koeber, S. [1 ,2 ]
Schindler, P. C. [1 ]
Korn, D. [1 ]
Wahlbrink, T. [3 ]
Bolten, J. [3 ]
Waldow, M. [3 ]
Elder, D. L. [4 ]
Dalton, L. R. [4 ]
Leuthold, J. [1 ]
Freude, W. [1 ,2 ]
Koos, C. [1 ,2 ]
机构：
[1] Karlsruhe Inst Technol, Inst Photon & Quantum Elect, D-76131 Karlsruhe, Germany
[2] Karlsruhe Inst Technol, Inst Microstruct Technol, D-76344 Eggenstein Leopoldshafen, Germany
[3] AMO GmbH, D-52074 Aachen, Germany
[4] Univ Washington, Dept Chem, Seattle, WA 98195 USA
来源：
OPTICS EXPRESS | 2014年 / 22卷 / 24期
基金：
欧洲研究理事会; 美国国家科学基金会; 欧盟第七框架计划;
关键词：
HIGH-SPEED; ELECTROOPTIC MODULATOR; STRAINED SILICON; IQ MODULATOR;
D O I：
10.1364/OE.22.029927
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V-pp. For the 16QAM experiment at 112 Gbit/s, we measure a bit error ratio of 5.1 x 10(-5) and a record-low energy consumption of only 19 fJ/bit. (C) 2014 Optical Society of America
引用
收藏
页码：29927 / 29936
页数：10
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