High performance n- and p-type field-effect transistors based on tetrathiafulvalene derivatives

被引：138

作者：

Naraso

Nishida, Jun-ichi

Kumaki, Daisuke

Tokito, Shizuo

Yamashita, Yoshiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect Chem, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 157851, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 30期

关键词：

D O I：

10.1021/ja0630083

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The first n-type FET based on TTF derivatives was prepared. TTF derivatives with halogeno-substituted quinoxaline rings showed excellent n- or p-type performances with high carrier mobilities. Introduction of halogen groups determined the FET polarity by controlling the HOMO and LUMO levels of the molecules. The π-stacking structures were observed in the single crystals of tetrahalogeno-TTFs. Copyright © 2006 American Chemical Society.

引用

页码：9598 / 9599

页数：2

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