High-power lasers (λ=940-980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure

被引：12

作者：

Vinokurov, D. A. ^{[1
]}

Stankevich, A. L. ^{[1
]}

Shamakhov, V. V. ^{[1
]}

Kapitonov, V. A. ^{[1
]}

Leshko, A. Yu. ^{[1
]}

Lyutetskii, A. V. ^{[1
]}

Nikolaev, D. N. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Rudova, N. A. ^{[1
]}

Sokolova, Z. N. ^{[1
]}

Slipchenko, S. O. ^{[1
]}

Khomylev, M. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2006年 / 40卷 / 06期

关键词：

D O I：

10.1134/S1063782606060224

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Asymmetric GaInAs/GaInAsP/AlGaAs heterostructures with the emission wavelength of 940 and 980 nm were grown by MOCVD. The composition of solid solution in the waveguide layer, Ga0.74In0.26As0.47P0.53, was chosen based on the calculations of the escape energy of electrons from the quantum well of the active region into the waveguide. Semiconductor lasers with the emission aperture of 100 m were fabricated from these heterostructures. The CW output optical power of 12 W was achieved at room temperature. The internal optical loss was 0.6 and 0.3 cm(-1) for 940 and 980 nm wavelengths, respectively.

引用

页码：745 / 748

页数：4

共 12 条

[1]

Adachi S., 1992, PHYS PROPERTIES 3 V

[2] High-power and high temperature long-term stability of Al-free 950nm laser structures on GaAs [J].

Beister, G ;

Erbert, G ;

Knauer, A ;

Maege, J ;

Ressel, P ;

Sebastian, J ;

Staske, R ;

Wenzel, H .

ELECTRONICS LETTERS, 1999, 35 (19) :1641-1643

[3]

GARBUZOV DZ, 1991, SOV PHYS SEMICOND+, V25, P560

[4] Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds [J].

Golikova, EG ;

Gorbylev, VA ;

Il'in, YV ;

Kureshov, VA ;

Leshko, AY ;

Lyutetskii, AV ;

Pikhtin, NA ;

Ryaboshtan, YA ;

Simakov, VA ;

Tarasov, IS ;

Tret'yakova, EA ;

Fetisova, NV .

TECHNICAL PHYSICS LETTERS, 2000, 26 (04) :295-297

[5] HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].

KRIJN, MPCM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31

[6] High power single-mode (λ=1.3-1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures [J].

Leshko, AY ;

Lyutetskii, AV ;

Pikhtin, NA ;

Slipchenko, SO ;

Sokolova, ZN ;

Fetisova, NV ;

Golikova, EG ;

Ryaboshtan, YA ;

Tarasov, IS .

SEMICONDUCTORS, 2002, 36 (11) :1308-1314

[7] 0.98-MU-M INGAAS-INGAASP-INGAP GRIN-SCH SL-SQW LASERS FOR COUPLING HIGH OPTICAL POWER INTO SINGLE-MODE FIBER [J].

OHKUBO, M ;

NAMIKI, S ;

IJICHI, T ;

IKETANI, A ;

KIKUTA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1932-1935

[8] 16W continuous-wave output power from 100μm-aperture laser with quantum well asymmetric heterostructure [J].

Pikhtin, NA ;

Slipchenko, SO ;

Sokolova, ZN ;

Stankevich, AL ;

Vinokurov, DA ;

Tarasov, IS ;

Alferov, ZI .

ELECTRONICS LETTERS, 2004, 40 (22) :1413-1414

[9] Internal optical loss in semiconductor lasers [J].

Pikhtin, NA ;

Slipchenko, SO ;

Sokolova, ZN ;

Tarasov, IS .

SEMICONDUCTORS, 2004, 38 (03) :360-367

[10] Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures [J].

Slipchenko, SO ;

Vinokurov, DA ;

Pikhtin, NA ;

Sokolova, ZN ;

Stankevich, AL ;

Tarasov, IS ;

Alferov, ZI .

SEMICONDUCTORS, 2004, 38 (12) :1430-1439

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