Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

被引：0
|
作者：
Keller, S [1 ]
Fleischer, SB
Chichibu, SF
Bowers, JE
Mishra, UK
DenBaars, SP
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93111 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93111 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1999年 / 216卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(199911)216:1<269::AID-PSSB269>3.0.CO;2-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The "funneling" effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.
引用
收藏
页码：269 / 272
页数：4
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