Investigation on mechanical properties of 6H-SiC crystal

被引:1
|
作者
Jin, Min [1 ]
Xu, Jiayue [1 ]
Chu, Yaoqing [1 ]
Fang, Yongzheng [1 ]
Shen, Hui [1 ]
Jiang, Guojian [1 ]
Wang, Zhanyong [1 ]
机构
[1] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 200235, Peoples R China
来源
APPLIED MATERIALS AND TECHNOLOGIES FOR MODERN MANUFACTURING, PTS 1-4 | 2013年 / 423-426卷
关键词
6H-SiC crystal; Vickers microhardness; Fracture toughness; Yield strength; Brittleness; SINGLE-CRYSTAL; MICROHARDNESS;
D O I
10.4028/www.scientific.net/AMM.423-426.251
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, the mechanical properties, such as Vickers microhardness H-v, fracture toughness K-c, yield strength sigma(v) and brittleness index B-i, of < 0001 > oriented 6H-SiC crystal are systematically evaluated using a microindentation technique under 0.1- 2 kg applied load. It is found the H-v is decreased as the applied load is increased which is mainly attributed to the effect of indenter penetration. The H-v value can be effectively presumed by Kick's law and the Meyer's index n is determined to be 1.73. However, the K-c value is measured nearly a constant (similar to 0.148 MPa.m(1/2)) which reveals the toughness of 6H-SiC(0001)) crystal is much weaker than those of Si-(100) and GaAs(100) crystals. The variation of sigma(v) to the load is similar to that of H-v. The brittleness index B-i also exhibits deceasing tendency as the applied load is added.
引用
收藏
页码:251 / 257
页数:7
相关论文
共 50 条
  • [31] / Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive
    Su Jianxiu
    Zhang Zhuqing
    Yao Jianguo
    Ma Lijie
    Feng Qigao
    ADVANCES IN ABRASIVE TECHNOLOGY XVI, 2013, 797 : 261 - +
  • [32] Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC
    Li, B. S.
    Wang, Z. G.
    Zhang, C. H.
    Wei, K. F.
    Yao, C. F.
    Sun, J. R.
    Cui, M. H.
    Li, Y. F.
    Zhu, H. P.
    Du, Y. Y.
    Zhu, Y. B.
    Pang, L. L.
    Song, P.
    Wang, J.
    JOURNAL OF NUCLEAR MATERIALS, 2014, 455 (1-3) : 116 - 121
  • [33] Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers
    Gupta, Saurabh
    Pecholt, Ben
    Molian, Pal
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (01) : 196 - 206
  • [34] Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers
    Saurabh Gupta
    Ben Pecholt
    Pal Molian
    Journal of Materials Science, 2011, 46 : 196 - 206
  • [35] Magnetic properties of Mn-doped 6H-SiC
    Song, Bo
    Bao, Huiqiang
    Li, Hui
    Lei, Ming
    Jian, Jikang
    Han, Jiecai
    Zhang, Xinghong
    Meng, Songhe
    Wang, Wanyan
    Chen, Xiaolong
    APPLIED PHYSICS LETTERS, 2009, 94 (10)
  • [36] PROPERTIES OF A CENTER ASSOCIATED WITH AN AL IMPURITY IN 6H-SIC
    KUZNETSOV, NI
    DMITRIEV, AP
    FURMAN, AS
    SEMICONDUCTORS, 1994, 28 (06) : 584 - 586
  • [37] Electronic and structural properties of the 6H-SiC(0001) surfaces
    Gunnella, R
    Veuillen, JY
    Berthet, A
    Tan, TAN
    SURFACE REVIEW AND LETTERS, 1998, 5 (01) : 187 - 191
  • [38] Impact of the geometry on the noise properties of the 6H-SiC diodes
    Ouacha, H
    Willander, M
    Ouacha, A
    Wahab, Q
    Holmén, G
    UNSOLVED PROBLEMS OF NOISE AND FLUCTUATIONS, 2000, 511 : 453 - 459
  • [39] Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures
    Lebedev, A. A.
    Zamorianskaya, M. V.
    Davydov, S. Yu.
    Kirilenko, D. A.
    Lebedev, S. P.
    Sorokin, L. M.
    Shustov, D. B.
    Scheglov, M. P.
    SEMICONDUCTORS, 2013, 47 (11) : 1539 - 1543
  • [40] Surface topography in mechanical polishing of 6H-SiC (0001) substrate
    Yin, Ling
    Huang, Han
    MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING III, 2008, 6798