Temperature dependence of the resistance of magnetic tunnel junctions with MgO barrier

被引：47
作者：
Kou, X.
Schmalhorst, J.
Thomas, A.
Reiss, G.
机构：
[1] Univ Bielefeld, Nano Device Grp, Dept Phys, D-33501 Bielefeld, Germany
[2] Lanzhou Univ, Lanzhou 7300000, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 21期
关键词：
D O I：
10.1063/1.2206680
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temperature dependent tunneling resistance of magnetic tunnel junctions with MgO barriers was characterized. In the junctions prepared by magnetron sputtering, the tunnel magnetoresistance decreases with increasing temperature. Various contributions to the tunnel conductance are discussed using different models. Not only the direct elastic tunneling contributes to the temperature dependence of tunnel magnetoresistance, but also the assisted, spin-independent tunneling plays an important role in determining the temperature dependent behavior in our magnetic tunneling junctions. The process is further investigated assuming magnon and phonon assisted tunneling and compared to junctions with alumina tunnel barrier. (c) 2006 American Institute of Physics.
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共 17 条
[1]   Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416 [J].
Butler, WH ;
Zhang, XG ;
Schulthess, TC ;
MacLaren, JM .
PHYSICAL REVIEW B, 2001, 63 (05)
[2]   Influence of barrier overoxidation and annealing on the inelastic spin-dependent tunneling in AlOx-based junctions [J].
Dimopoulos, T ;
Henry, Y ;
Da Costa, V ;
Tiusan, C ;
Ounadjela, K .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6936-6938
[3]   Analysis of the magnetotransport channels in tunnel junctions with amorphous CoFeB [J].
Dimopoulos, T ;
Gieres, G ;
Wecker, J ;
Luo, Y ;
Samwer, K .
EUROPHYSICS LETTERS, 2004, 68 (05) :706-712
[4]  
GLAZMAN LI, 1988, ZH EKSP TEOR FIZ+, V94, P332
[5]   Analyses of intrinsic magnetoelectric properties in spin-valve-type tunnel junctions with high magnetoresistance and low resistance [J].
Han, XF ;
Yu, ACC ;
Oogane, M ;
Murai, J ;
Daibou, T ;
Miyazaki, T .
PHYSICAL REVIEW B, 2001, 63 (22)
[6]   Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature [J].
Hayakawa, J ;
Ikeda, S ;
Matsukura, F ;
Takahashi, H ;
Ohno, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19) :L587-L589
[7]   TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].
JULLIERE, M .
PHYSICS LETTERS A, 1975, 54 (03) :225-226
[8]   Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction [J].
Mathon, J ;
Umerski, A .
PHYSICAL REVIEW B, 2001, 63 (22)
[9]   Spin polarized tunneling in ferromagnetic junctions [J].
Moodera, JS ;
Mathon, G .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :248-273
[10]   Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers [J].
Parkin, SSP ;
Kaiser, C ;
Panchula, A ;
Rice, PM ;
Hughes, B ;
Samant, M ;
Yang, SH .
NATURE MATERIALS, 2004, 3 (12) :862-867
12