Multiheterojunction Phototransistors Based on Graphene-PbSe Quantum Dot Hybrids

被引：38
作者：
Zhang, Yating [1 ,2 ]
Cao, Mingxuan [1 ,2 ]
Song, Xiaoxian [1 ,2 ]
Wang, Jianlong
Che, Yongli [1 ,2 ]
Dai, Haitao [3 ]
Ding, Xin [1 ,2 ]
Zhang, Guizhong [1 ,2 ]
Yao, Jianquan [1 ,2 ]
机构：
[1] Tianjin Univ, Coll Precis Instruments & Optoelect Engn, Inst Laser & Optoelect, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 37期
基金：
中国国家自然科学基金;
关键词：
INFRARED PHOTODETECTORS; CHARGE-TRANSPORT;
D O I：
10.1021/acs.jpcc.5b07318
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Graphene-semiconductor quantum dot (QD) hybrid field effect phototransistors (FEpTs) have attracted much interest due to their ultrahigh gain and responsivity in photo detection. However, most reported results are based on single-layer heterojunction, and the multiheterojunction FEpTs are often ignored. Here, we design two typical multiheterojunction FEpTs based on graphene-PbSe quantum dot (QD) hybrids, including QD at the bottom layer (QD-bottom) and graphene at the bottom layer (G-bottom) FEpTs. Through a comparative study, G-bottom FEpTs showed a multisaturation behavior due to the multigraphene layer effect, which was absent in the QD-bottom FEpTs. The mobilities for electrons and holes were mu(E) = 147 cm(2) V-1 s(-1) and mu(E) = 137 cm(2) V-1 s(-1) in the G-bottom FEpTs and mu(E) = 14 cm(2) s(-1) and mu(E) = 59 cm(2) V-1 s(-1) in the QD-bottom FEpTs. Higher responsivity (similar to 10(6) A W-1) and faster response rate were both achieved by the G-bottom FEpTs. All of the advantages in G-bottom FEpTs were attributed to the back-gate effect. Therefore, high performance is expected in those FEpTs whose heterojunctions are designed to be close to the back-gate.
引用
收藏
页码：21739 / 21743
页数：5
相关论文
共 32 条
[11]  
Konstantatos G, 2012, NAT NANOTECHNOL, V7, P363, DOI [10.1038/nnano.2012.60, 10.1038/NNANO.2012.60]
[12]   The Architecture of Colloidal Quantum Dot Solar Cells: Materials to Devices [J].
Kramer, Illan J. ;
Sargent, Edward H. .
CHEMICAL REVIEWS, 2014, 114 (01) :863-882
[13]   Structural, optical, and electrical properties of PbSe nanocrystal solids treated thermally or with simple amines [J].
Law, Matt ;
Luther, Joseph M. ;
Song, Oing ;
Hughes, Barbara K. ;
Perkins, Craig L. ;
Nozik, Arthur J. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (18) :5974-5985
[14]   Nanoparticle-Tuned Self-Organization of a Bulk Heterojunction Hybrid Solar Cell with Enhanced Performance [J].
Liao, Hsueh-Chung ;
Tsao, Cheng-Si ;
Lin, Tsung-Han ;
Jao, Meng-Huan ;
Chuang, Chih-Min ;
Chang, Sheng-Yong ;
Huang, Yu-Ching ;
Shao, Yu-Tsun ;
Chen, Charn-Ying ;
Su, Chun-Jen ;
Jeng, U-Ser ;
Chen, Yang-Fang ;
Su, Wei-Fang .
ACS NANO, 2012, 6 (02) :1657-1666
[15]   Dependence of Carrier Mobility on Nanocrystal Size and Ligand Length in PbSe Nanocrystal Solids [J].
Liu, Yao ;
Gibbs, Markelle ;
Puthussery, James ;
Gaik, Steven ;
Ihly, Rachelle ;
Hillhouse, Hugh W. ;
Law, Matt .
NANO LETTERS, 2010, 10 (05) :1960-1969
[16]   Solution-processed PbS quantum dot infrared photodetectors and photovoltaics [J].
McDonald, SA ;
Konstantatos, G ;
Zhang, SG ;
Cyr, PW ;
Klem, EJD ;
Levina, L ;
Sargent, EH .
NATURE MATERIALS, 2005, 4 (02) :138-142
[17]  
Neamen D. A., 2003, SEMICONDUCTOR PHYS D
[18]  
Ohshima H., 1984, ELECT PHENOMENA INTE
[19]   Near-infrared imaging with quantum-dot-sensitized organic photodiodes [J].
Rauch, Tobias ;
Boeberl, Michaela ;
Tedde, Sandro F. ;
Fuerst, Jens ;
Kovalenko, Maksym V. ;
Hesser, Guenter ;
Lemmer, Uli ;
Heiss, Wolfgang ;
Hayden, Oliver .
NATURE PHOTONICS, 2009, 3 (06) :332-336
[20]   Theory of a field-effect transistor based on a semiconductor nanocrystal array [J].
Reich, K. V. ;
Chen, Tianran ;
Shklovskii, B. I. .
PHYSICAL REVIEW B, 2014, 89 (23)
1234