Inductively coupled plasma etching of Pb(ZrxTi1-x)O3 thin films in Cl2/C2F6/Ar and HBr/Ar plasmas

Pb(ZrxTi1-x)O-3 thin films were etched in an inductively coupled plasma by using various etch gases such as Cl-2/Ar, C2F6/Ar, Cl-2/C2F6/Ar and HBr/Ar. The etch rates and etch profiles for each etch gas were investigated. Fast etch rates were obtained in chlorine-containing etch gases (e.g., Cl-2/Ar and Cl-2/C2F6/Ar), and clean and steep etch profiles were achieved in Cl-2/C2F6/Ar or HBr/Ar gases. The gas mixture of Cl-2 and C2F6 was proposed to give a fast etch rate and a steep sidewall angle of etched patterns. The optimum gas mixture of Cl-2/C2F6/Ar was found by varying the gas ratio of Cl, to C2F6. On the other hand, HBr/Ar gas as an alternative for etching of the Pb(ZrxTi1-x)O-3 films was examined. Cl-2/C2F6/Ar and HBr/Ar etch gases were compared with respect to etch rate, etch profile and electrical properties.