Laser-diode pumped passively Q-switched Nd:Y xGd1-x VO4 laser with a GaAs saturable absorber

被引：23

作者：

He, YA ^{[1
]}

Hou, XY

Qin, LJ

Sun, YM

Li, YF

Qi, HJ

Pan, L

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China

[2] Yantai Univ, Sch Environm & Mat Engn, Yantai 264005, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2004年 / 234卷 / 1-6期

关键词：

laser-diode pumped; passively Q-switched; Nd : Y Gd-x(1-x) VO4 mixed crystal; GaAs;

D O I：

10.1016/j.optcom.2004.02.002

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A laser-diode Pumped Nd:YxGd1-x VO4 laser passively Q-switched with a GaAs saturable absorber has been realized. Both continuous wave (CW) and Q-switched laser performances at 1.06 pm are investigated. At the incident pump power of 4.4 W and with the output coupler transmission of 15&, the CW Output power of 2.2 W is obtained, corresponding to an optical conversion efficiency of 50%, and an average slope efficiency of 63%. For Q-switched operation, at the pump power of 3.9 W and with the output coupler transmission of 50%, stable laser pulses with pulse duration of 12 ns, pulse energy of 3.8 muJ and repetition rate of 199 KHz are generated, corresponding to peak power of 317 W. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：305 / 308

页数：4

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