Improved surface sensing of DNA on gas-etched porous silicon

被引:20
作者
Tessier, D. C. [1 ]
Boughaba, S. [1 ]
Arbour, M. [1 ]
Roos, P. [1 ]
Pan, G. [1 ]
机构
[1] IatroQuest Corp, Verdun, PQ H3E 1H4, Canada
关键词
porous silicon; etching; photoluminescence; DNA; silane; sensors;
D O I
10.1016/j.snb.2006.02.002
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A new gas-based etching process has been used to produce porous silicon (Psi) samples as sensor substrates. The as-etched porous material demonstrated an intense photoluminescence signal at an average wavelength of 658 nm (sigma = 1%). The photoluminescence signal, with a peak wavelength in the range 530-540 nm, was found to increase with the length and concentration of unmodified oligonucleotide probes on surfaces coated with either amino-propyl trimethoxysilane (APTMS) or glycidoxy-propyl trimethoxysilane (GPTMS). The large surface area that characterized this material significantly increased the binding of DNA probes and led to increased sensitivity in target detection. Using fluorescently-labeled DNA, the target capture for sub-micromolar detection on this novel sensor substrate was demonstrated to be 100 times higher than that obtained on non-etched silicon. In a 1h assay, we were able to detect specifically approximately 3 fmole of a 25mer target oligonucleotide per mm(2) of substrate. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:220 / 230
页数:11
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