Large aperture 850 nm oxide-confined VCSELs for 10Gb/s data communication

被引：9

作者：

Aggerstam, T ^{[1
]}

Von Würtemberg, RM ^{[1
]}

Runnström, C ^{[1
]}

Choumas, E ^{[1
]}

机构：

[1] Zarlink Semicond AB, Opt Syst Div, SE-17526 Jarfalla, Sweden

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS VI | 2002年 / 4649卷

关键词：

high-speed VCSEL; oxide confined; 850; run; data communication; transmission;

D O I：

10.1117/12.469244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As the bit rates of high-speed data transmission increase, the dynamic properties of the VCSEL are becoming more important. High photon density is of great importance for high modulation efficiency and low noise. We will present a schematic of the Zarlink 850nm 10Gb/s selectively oxidized VCSEL design and results from small and large signal modulation. The modulation characteristics were improved by utilizing InGaAs quantum wells, which have better gain characteristics than GaAs wells. 10Gb/s transmission over 300m of OFS-Fitel LaserWave(TM) 300 Fiber for a 12um aperture multimode VCSEL at 80degreesC will be demonstrated. Bit error rate (BER) measurement with the corresponding power penalty will also be presented.

引用

页码：19 / 24

页数：6