A low-jitter wide-range skew-calibrated dual-loop DLL using antifuse circuitry for high-speed DRAM

被引:23
作者
Kim, SJ [1 ]
Hong, SH
Wee, JK
Cho, JH
Lee, PS
Ahn, JH
Chung, JY
机构
[1] Hynix Semicond Inc, Memory Res & Dev, Adv Design Team, Ichon Si 467701, Kyoungki Do, South Korea
[2] Hallym Univ, Dept Elect Engn, Chunchun Si 200702, Kangwon Do, South Korea
关键词
delay-locked loop; dual-loop operation; high-speed DRAM; programmable replica delay; skew calibration;
D O I
10.1109/JSSC.2002.1004577
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a delay-locked loop (DLL) circuit having two advancements, a dual-loop operation for a wide lock range and programmable replica delays using antifuse circuitry and internal voltage generator for a post-package skew calibration. The dual-loop operation uses information from the initial time difference between reference clock and internal clock to select one of the differential internal loops. This increases the lock range of the DLL to the lower frequency. In addition, incorporation of the programmable replica delay using antifuse circuitry and the internal voltage generator allows for the elimination of skews between external clock and internal clock that occur from on-chip and off-chip variations after the package process. The proposed DLL, fabricated on 0.16-mum DRAM process, operates over the wide range of 42-400 MHz with 2.3-V power supply. The measured results show 43-ps peak-to-peak jitter and 4.71-ps rms jitter consuming 52 mW at 400 MHz.
引用
收藏
页码:726 / 734
页数:9
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