Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE

被引:99
作者
Honda, Y [1 ]
Kameshiro, N [1 ]
Yamaguchi, M [1 ]
Sawaki, N [1 ]
机构
[1] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 4648603, Japan
关键词
nanostructures; metalorganic vapor phase epitaxy; selective epitaxy; nitrides; semiconducting III-V materials;
D O I
10.1016/S0022-0248(02)01353-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The selective growth of wurtzile GaN was performed by MOVPE on (1 1 1) facets on a patterned 7-degree off-oriented (0 0 1) silicon substrate, which had been prepared by anisotropic etching with KOH solution. The c-axis of the GaN was along the [1 1 1] axis of the silicon. At an early growth stage, the shape of the crystal grown selectively was a stripe having truncated triangular cross-section and its (1 (1) over bar 0 1) facet was parallel to the substrate surface. After a sufficient growth duration, the stripes coalesced with each other and a GaN film with a flat (1 (1) over bar 0 1) surface was achieved. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:82 / 86
页数:5
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