Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials

被引：51

作者：

El-Hinnawy, Nabil ^{[1
]}

Borodulin, Pavel ^{[1
]}

Wagner, Brian P. ^{[1
]}

King, Matthew R. ^{[1
]}

Jones, Evan B. ^{[1
]}

Howell, Robert S. ^{[1
]}

Lee, Michael J. ^{[1
]}

Young, Robert M. ^{[1
]}

机构：

[1] Northrop Grumman Elect Syst, Adv Technol Lab, Linthicum, MD 21090 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 01期

关键词：

CONDUCTIVITY;

D O I：

10.1063/1.4885388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high performance RF (radio-frequency) switch based on the phase change effect in germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1-1.5 mu s toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on-or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1-0.24 dB. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：5

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