Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials

A high performance RF (radio-frequency) switch based on the phase change effect in germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent thin film heating element for 0.1-1.5 mu s toggles the switch in a latching fashion. Being non-volatile, no power is required to hold the switch in the on-or off-state. State-of-the-art solid-state RF switches currently in use have an on-state loss of 1 dB; here, we demonstrate an inline phase change switch with a low on-state resistance showing over a frequency range of 0-40 GHz an insertion loss of just 0.1-0.24 dB. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.