High coupling piezoelectric thin films of Pb(Zr,Ti)O3-based ternary perovskite compounds for GHz-range film bulk acoustic resonators

被引：23

作者：

Yamauchi, N. ^{[1
]}

Shirai, T. ^{[1
]}

Yoshihara, T. ^{[1
]}

Hayasaki, Y. ^{[1
]}

Ueda, T. ^{[1
]}

Matsushima, T. ^{[1
]}

Wasa, K. ^{[2
]}

Kanno, I. ^{[2
]}

Kotera, H. ^{[2
]}

机构：

[1] Panason Elect Works Co Ltd, Adv Technol Dev Lab, Osaka 5818686, Japan

[2] Kyoto Univ, Dept Micro Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 17期

基金：

日本科学技术振兴机构;

关键词：

acoustic resonators; bulk acoustic wave devices; micromechanical resonators; piezoelectric thin films; sputtered coatings;

D O I：

10.1063/1.3126060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have deposited nearly stress-free single-crystal thin films of (001) Pb(Mn,Nb)O-3-Pb(Zr,Ti)O-3 (PMnN-PZT) on (001)MgO substrates by rf-magnetron sputtering using a quenching process after the film growth. It is found that single c-domain/single-crystal thin films of PMnN-PZT containing 5%-10% PMnN show a strong hard ferroelectric response with 2E(c)congruent to 400 kV/cm and P-s congruent to 70 mu C/cm(2). GHz-range film bulk acoustic resonators incorporating PMnN-PZT thin films have been fabricated with microelectromechanical system technology. The maximum electromechanical coupling coefficient k(t) and mechanical quality factor Q(m) were 0.7 and 185 in the 4 GHz range, respectively.

引用

页数：3

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