Material science - Injecting spin into electronics

被引:74
作者
Oestreich, M [1 ]
机构
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
关键词
D O I
10.1038/45406
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Conventional semiconductor devices rely on the transport and storage of electronic charge. But electrons have spin as well as charge, and spin electronics is an emerging field that has already delivered commercial devices based on metallic materials. The goal of making similar devices from semiconductors is getting nearer thanks to two studies that show how to inject spin into a semiconductor.
引用
收藏
页码:735 / 737
页数:3
相关论文
共 10 条
  • [1] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR
    DATTA, S
    DAS, B
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (07) : 665 - 667
  • [2] Injection and detection of a spin-polarized current in a light-emitting diode
    Fiederling, R
    Keim, M
    Reuscher, G
    Ossau, W
    Schmidt, G
    Waag, A
    Molenkamp, LW
    [J]. NATURE, 1999, 402 (6763) : 787 - 790
  • [3] LAYERED MAGNETIC-STRUCTURES - EVIDENCE FOR ANTIFERROMAGNETIC COUPLING OF FE LAYERS ACROSS CR INTERLAYERS
    GRUNBERG, P
    SCHREIBER, R
    PANG, Y
    BRODSKY, MB
    SOWERS, H
    [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (19) : 2442 - 2445
  • [4] Observation of spin injection at a ferromagnet-semiconductor interface
    Hammar, PR
    Bennett, BR
    Yang, MJ
    Johnson, M
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (01) : 203 - 206
  • [5] Quantum information processing using quantum dot spins and cavity QED
    Imamoglu, A
    Awschalom, DD
    Burkard, G
    DiVincenzo, DP
    Loss, D
    Sherwin, M
    Small, A
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (20) : 4204 - 4207
  • [6] Hole spin quantum beats in quantum-well structures
    Marie, X
    Amand, T
    Le Jeune, P
    Paillard, M
    Renucci, P
    Golub, LE
    Dymnikov, VD
    Ivchenko, EL
    [J]. PHYSICAL REVIEW B, 1999, 60 (08): : 5811 - 5817
  • [7] Meier F., 1984, OPTICAL ORIENTATION, DOI North-Holland
  • [8] Electrical spin injection in a ferromagnetic semiconductor heterostructure
    Ohno, Y
    Young, DK
    Beschoten, B
    Matsukura, F
    Ohno, H
    Awschalom, DD
    [J]. NATURE, 1999, 402 (6763) : 790 - 792
  • [9] Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
    Parkin, SSP
    Roche, KP
    Samant, MG
    Rice, PM
    Beyers, RB
    Scheuerlein, RE
    O'Sullivan, EJ
    Brown, SL
    Bucchigano, J
    Abraham, DW
    Lu, Y
    Rooks, M
    Trouilloud, PL
    Wanner, RA
    Gallagher, WJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 5828 - 5833
  • [10] Giant magnetoresistance dependence on the lateral correlation length of the interface roughness in magnetic superlattices
    Schad, R
    Beliën, P
    Verbanck, G
    Moshchalkov, VV
    Bruynseraede, Y
    Fischer, HE
    Lefebvre, S
    Bessiere, M
    [J]. PHYSICAL REVIEW B, 1999, 59 (02): : 1242 - 1248