Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony (vol 145, pg 668, 1994)

被引：1
作者：
Yamamoto, K [1 ]
Asahi, H [1 ]
Gonda, S [1 ]
机构：
[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 182卷 / 1-2期
关键词：
D O I：
10.1016/S0022-0248(97)00434-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：227 / 229
页数：3
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