Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films

被引：12
作者：
Krishnan, R. Reshmi [1 ]
Chalana, S. R. [1 ]
Suresh, S. [1 ]
Sudheer, S. K. [1 ]
Sudarsanakumar, C. [2 ]
Kumar, M. C. Santhosh [3 ]
Pillai, V. P. Mahadevan [1 ]
机构：
[1] Univ Kerala, Dept Optoelect, Thiruvananthapuram 695581, Kerala, India
[2] Mahatma Gandhi Univ, Sch Pure & Appl Phys, Kottayam 686560, Kerala, India
[3] Natl Inst Technol, Dept Phys, Optoelect Mat & Devices Lab, Tiruchirappalli 620015, India
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 1-2 | 2017年 / 14卷 / 1-2期
关键词：
indium oxide; Nb; doping; photoluminescence; spectroscopic ellipsometry; TRANSPARENT CONDUCTING OXIDES; INDIUM-OXIDE; THIN-FILMS; SUBSTRATE-TEMPERATURE; OPTOELECTRICAL PROPERTIES; TIN; GROWTH; NANOPARTICLES; PHOTOEMISSION; FABRICATION;
D O I：
10.1002/pssc.201600095
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3 films are analyzed using techniques such as X-ray diffraction (XRD), micro-Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy, UV-visible spectroscopy, spectroscopic ellipsometry, photoluminescence spectroscopy and Hall effect measurements. XRD analysis reveals that the as-deposited undoped and Nb doped films are polycrystalline in nature with cubic bixbyite structure. Raman analysis supports the presence of cubic bixbyite structure of In2O3 in the films. XPS analysis shows a decrease of oxygen deficiency due to Nb and the existence of Nb as Nb4+ in the In2O3 lattice. The band gap energy of the films increases with increase in Nb concentration. PL spectra reveal intense UV and visible emissions in all the films. Optical constants of the films are determined using spectroscopic ellipsometry. The thickness of films estimated using FESEM and ellipsometry are in good agreement. The carrier concentration, mobility and nature of carriers are measured using Hall measurement technique in Van der Pauw configuration at room temperature. (c) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：15
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