Controlled synthesis of 2D MX2 (M = Mo, W; X = S, Se) heterostructures and alloys

被引:17
作者
Cain, Jeffrey D. [1 ,2 ]
Hanson, Eve D. [1 ]
Dravid, Vinayak P. [1 ,2 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Int Inst Nanotechnol, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
VAPOR-DEPOSITION GROWTH; MONOLAYER MOS2; INPLANE HETEROSTRUCTURES; EPITAXIAL-GROWTH; VERTICAL GROWTH; LAYER; PHOTOLUMINESCENCE;
D O I
10.1063/1.5025710
中图分类号
O59 [应用物理学];
学科分类号
摘要
The advent of two-dimensional materials and van der Waals (vdW) heterostructures has been a boon for the nanoscience community, enabling the fabrication of nanostructures with atomic-scale precision, resulting in high performance opto-electronic devices. Yet, while vdW heterostructures have been widely studied, their fabrication remains rudimentary, relying upon physical stacking and ad hoc collections of recipes, rather than a rational framework. Here, we report our work on the synthesis of vdW heterostructures and monolayer alloys of MoS2-WS2 and MoSe2-WSe2 and the creation of a unifying, diagrammatic approach to heterostructure growth in these materials systems, which we call Time-Temperature-Architecture (TTA) diagrams. We demonstrate the temperature tunable synthesis of in-plane, vertical, and hybrid heterostructures, as well as monolayer alloys within the MoS2-WS2 and MoSe2-WSe2 systems. We use the TTA framework to add previously unexplored entries to this collection: the first ever single-step growth of MoSe2-WSe2 vertical heterostructures and Mo1-xWxSe2 alloys, and a new MoS2-WS2 hybrid architecture that combines the morphologies of both vertical and in-plane heterostructures. The TTA diagrams are a simple framework for vdW heterostructure and alloy growth, which we believe will be crucial, and enable further work on heterostructures and alloys of MoS2-WS2 and MoSe2-WSe2. Published by AIP Publishing.
引用
收藏
页数:9
相关论文
共 36 条
[31]   Chemical Vapor Deposition Growth of Crystalline Mono layer MoSe2 [J].
Wang, Xingli ;
Gong, Yongji ;
Shi, Gang ;
Chow, Wai Leong ;
Keyshar, Kunttal ;
Ye, Gonglan ;
Vajtai, Robert ;
Lou, Jun ;
Liu, Zheng ;
Ringe, Emilie ;
Tay, Beng Kang ;
Ajayan, Pulickel M. .
ACS NANO, 2014, 8 (05) :5125-5131
[32]   Light-emitting diodes by band-structure engineering in van der Waals heterostructures [J].
Withers, F. ;
Del Pozo-Zamudio, O. ;
Mishchenko, A. ;
Rooney, A. P. ;
Gholinia, A. ;
Watanabe, K. ;
Taniguchi, T. ;
Haigh, S. J. ;
Geim, A. K. ;
Tartakovskii, A. I. ;
Novoselov, K. S. .
NATURE MATERIALS, 2015, 14 (03) :301-306
[33]   Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments [J].
Ye, Han ;
Zhou, Jiadong ;
Er, Dequan ;
Price, Christopher C. ;
Yu, Zhongyuan ;
Liu, Yumin ;
Lowengrub, John ;
Lou, Jun ;
Liu, Zheng ;
Shenoy, Vivek B. .
ACS NANO, 2017, 11 (12) :12780-12788
[34]   A reliable way of mechanical exfoliation of large scale two dimensional materials with high quality [J].
Yuan, Lin ;
Ge, Jun ;
Peng, Xianglin ;
Zhang, Qian ;
Wu, Zefei ;
Jian, Yu ;
Xiong, Xiaolu ;
Yin, Hongxing ;
Han, Junfeng .
AIP ADVANCES, 2016, 6 (12)
[35]   Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers [J].
Zhang, Xin-Quan ;
Lin, Chin-Hao ;
Tseng, Yu-Wen ;
Huang, Kuan-Hua ;
Lee, Yi-Hsien .
NANO LETTERS, 2015, 15 (01) :410-415
[36]   Controlled Growth of High-Quality Monolayer WS2 Layers on Sapphire and Imaging Its Grain Boundary [J].
Zhang, Yu ;
Zhang, Yanfeng ;
Ji, Qingqing ;
Ju, Jing ;
Yuan, Hongtao ;
Shi, Jianping ;
Gao, Teng ;
Ma, Donglin ;
Liu, Mengxi ;
Chen, Yubin ;
Song, Xiuju ;
Hwang, Harold Y. ;
Cui, Yi ;
Liu, Zhongfan .
ACS NANO, 2013, 7 (10) :8963-8971