Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate

被引:5
作者
Amir, Walid [1 ]
Kim, Dae-Hyun [2 ]
Kim, Tae-Woo [1 ]
机构
[1] Univ Ulsan, Sch Elect Engn, Ulsan 44610, South Korea
[2] Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea
基金
新加坡国家研究基金会;
关键词
Interface trap density; border trap density; quantum mechanical effect; high-k; III-V substrate; ELECTRICAL-PROPERTIES; SURFACE-STATES; MOS CAPACITORS; OXIDE TRAPS; AL2O3; DIELECTRICS;
D O I
10.1109/ACCESS.2020.3038856
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
We investigated the effects of quantum confinement in determining the interface traps (Dit) and border traps (N-bt) of ALD deposited Al2O3 with temperature variations onto InxGa1-xAs on a 300-mm Si (001) substrate. We also analysed the impact of these effects on the total gate capacitance of high-k/Si and high-k/InxGa1-xAs structures using 1D Poisson-Schrodinger solver simulation tool (Nextnano). While quantum confinement has no or very little impact on the gate capacitance of high-k /Si structure, it has a considerably high amount of impact on the high-k/InxGa1-xAs structures and substantially lowers the total gate capacitance. To refiect the actual thickness between the insulator-semiconductor interface and charge centroid, capacitance-equivalent-thickness was used to refiect the effects of quantum confinement in the InxGa1-xAs layer. The Dit and Nbt values extracted using capacitance-equivalent-thickness were observed to be around 10% and 25%, respectively, higher than the values of extraction with equivalent-oxide-thickness.
引用
收藏
页码:211464 / 211473
页数:10
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