Detecting signal-overshoots for reliability analysis in high-speed system-on-chips

被引:10
作者
Nourani, M [1 ]
Attarha, AR [1 ]
机构
[1] Univ Texas, Ctr Integrated Circuits & Syst, Richardson, TX 75083 USA
关键词
high-speed interconnect; hot carrier; reliability loss; system-on-chip; voltage overshoot;
D O I
10.1109/TR.2002.804491
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The rising level of complexity and speed of SoC makes it increasingly vital to test adequately the system for signal integrity. Voltage overshoot is one of the integrity factors that has not been sufficiently addressed for the purpose of testing and reliability. Overshoots are known to inject hot-carriers into the gate oxide and cause permanent degradation of MOSFET transistors' performance. This performance degradation creates a serious reliability concern. Unfortunately, accurate parasitic extraction and simulation to detect the interconnect problems is very time consuming and very sensitive to the circuit characteristics and thus is not practical for large SoC. This paper presents a built-in chip methodology to detect and measure the signal overshoots occurring on the interconnects of high-speed system-on-chips. This built-in test strategy does not require external probing or signal waveform monitoring. Instead, the overshoot detector cells monitor signals received by a core (e.g., from the system bus) and record the occurrence of overshoots over a period of operation. The overshoot information accumulated by these cells can be compressed and scanned out efficiently and inexpensively for final quality grading, reliability analysis, and diagnosis.
引用
收藏
页码:494 / 504
页数:11
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