Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications

被引：20

作者：

Jäger, H ^{[1
]}

Grebennikov, A ^{[1
]}

Heaney, E ^{[1
]}

Weigel, R ^{[1
]}

机构：

[1] MA COM Eurotec Operat, Cork, Ireland

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an approach to high. efficiency power amplifier performance over a wide frequency range is discussed. Results for a practical implementation of a multi-band and multi-mode handset power amplifier are shown. Measurements demonstrate feasibility of the concept for WCDMA, DCS1800 and PCS1900 high-efficient operation. A PAE of better than 38 % at 27 dBm output power and an ACLR of -37 dBc in WCDMA operation, as well as greater than 50 % PAE at 30 dBm output power in the DCS1800 and PCS1900 band are documented.

引用

页码：1035 / 1038

页数：4

共 6 条

[1] CIRCUIT TECHNIQUE FOR BROAD-BANDING ELECTRONIC TUNING RANGE OF GUNN OSCILLATORS [J].

AITCHISON, CS ;

GELSTHORPE, RV .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (01) :21-28

[2]

CAMARGO E, 1985, MICROWAVES RF, V24, P93

[3] BROAD-BAND POWER EFFICIENT CLASS-E AMPLIFIERS WITH A NONLINEAR CAD MODEL OF THE ACTIVE MOS DEVICE [J].

EVERARD, JKA ;

KING, AJ .

JOURNAL OF THE INSTITUTION OF ELECTRONIC AND RADIO ENGINEERS, 1987, 57 (02) :52-58

[4]

GREBENNIKOV AV, 2002 IEEE MTT S INT

[5]

NISHIMURA TB, 2001 IEEE RFIC S DIG, P31

[6]

ZHANG S, 2001 IEEE MTT S INT, P927

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