Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes

被引：72

作者：

Li, Wenshen ^{[1
]}

Nomoto, Kazuki ^{[1
]}

Hu, Zongyang ^{[1
]}

Jen, Debdeep ^{[1
,2
,3
]}

Xing, Huili Grace ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Kavli Inst Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 06期

关键词：

26;

D O I：

10.7567/1882-0786/ab206c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga2O3 vertical trench Schottky barrier diodes with four different fin-channel orientations are realized on (001) substrates and compared. Fin-channels along the [010] direction with (100)-like sidewalls result in the highest forward current, while other channel orientations all lead to a shallow turn-on behavior and much lower forward current, indicative of severe sidewall depletion attributed to negative interface charges. The comparison indicates that the interface charge density is the smallest on the (100)-like surfaces. The breakdown voltage of the diodes with 1-mu m fin width is around 2.4 kV, with no apparent dependence on the channel orientation. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

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