Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes

被引：72

作者：

Li, Wenshen ^{[1
]}

Nomoto, Kazuki ^{[1
]}

Hu, Zongyang ^{[1
]}

Jen, Debdeep ^{[1
,2
,3
]}

Xing, Huili Grace ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[3] Cornell Univ, Kavli Inst Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 06期

关键词：

26;

D O I：

10.7567/1882-0786/ab206c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga2O3 vertical trench Schottky barrier diodes with four different fin-channel orientations are realized on (001) substrates and compared. Fin-channels along the [010] direction with (100)-like sidewalls result in the highest forward current, while other channel orientations all lead to a shallow turn-on behavior and much lower forward current, indicative of severe sidewall depletion attributed to negative interface charges. The comparison indicates that the interface charge density is the smallest on the (100)-like surfaces. The breakdown voltage of the diodes with 1-mu m fin width is around 2.4 kV, with no apparent dependence on the channel orientation. (C) 2019 The Japan Society of Applied Physics

引用

页数：4

共 26 条

[1] Mechanism Behind the Easy Exfoliation of Ga2O3 Ultra-Thin Film Along (100) Surface [J].

Barman, Sajib K. ;

Huda, Muhammad N. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2019, 13 (05)

[2] Influence of metal choice on (010) β-Ga2O3 Schottky diode properties [J].

Farzana, Esmat ;

Zhang, Zeng ;

Paul, Pran K. ;

Arehart, Aaron R. ;

Ringel, Steven A. .

APPLIED PHYSICS LETTERS, 2017, 110 (20)

[3] A Comparative Study on the Electrical Properties of Vertical ((2)over-bar01) and (010) β-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates [J].

Fu, Houqiang ;

Chen, Hong ;

Huang, Xuanqi ;

Baranowski, Izak ;

Montes, Jossue ;

Yang, Tsung-Han ;

Zhao, Yuji .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) :3507-3513

[4] 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs [J].

Green, Andrew J. ;

Chabak, Kelson D. ;

Heller, Eric R. ;

Fitch, Robert C., Jr. ;

Baldini, Michele ;

Fiedler, Andreas ;

Irmscher, Klaus ;

Wagner, Guenter ;

Galazka, Zbigniew ;

Tetlak, Stephen E. ;

Crespo, Antonio ;

Leedy, Kevin ;

Jessen, Gregg H. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (07) :902-905

[5] Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics [J].

He, Qiming ;

Mu, Wenxiang ;

Fu, Bo ;

Jia, Zhitai ;

Long, Shibing ;

Yu, Zhaoan ;

Yao, Zhihong ;

Wang, Wei ;

Dong, Hang ;

Qin, Yuan ;

Jian, Guangzhong ;

Zhang, Ying ;

Xue, Huiwen ;

Lv, Hangbing ;

Liu, Qi ;

Tang, Minghua ;

Tao, Xutang ;

Liu, Ming .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (04) :556-559

[6] Direct comparison of plain and oxidized metal Schottky contacts on β-Ga2O3 [J].

Hou, C. ;

Gazoni, R. M. ;

Reeves, R. J. ;

Allen, M. W. .

APPLIED PHYSICS LETTERS, 2019, 114 (03)

[7] Oxidized Metal Schottky Contacts on (010) β-Ga2O3 [J].

Hou, Caixia ;

Gazoni, Rodrigo M. ;

Reeves, Roger J. ;

Allen, Martin W. .

IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) :337-340

[8]

Hu Z., 2018, Appl. Phys. Lett, V113, DOI DOI 10.1063/1.5038105

[9] Field-Plated Lateral β-Ga2O3 Schottky Barrie Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 [J].

Hu, Zhuangzhuang ;

Zhou, Hong ;

Feng, Qian ;

Zhang, Jincheng ;

Zhang, Chunfu ;

Dang, Kui ;

Cai, Yuncong ;

Feng, Zhaoqing ;

Gao, Yangyang ;

Kang, Xuanwu ;

Hao, Yue .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (10) :1564-1567

[10] Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV [J].

Hu, Zongyang ;

Nomoto, Kazuki ;

Li, Wenshen ;

Tanen, Nicholas ;

Sasaki, Kohei ;

Kuramata, Akito ;

Nakamura, Tohru ;

Jena, Debdeep ;

Xing, Huili Grace .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (06) :869-872

← 1 2 3 →