A 160 GHz Pulsed Radar Transceiver in 65 nm CMOS

This paper presents a 160 GHz center frequency pulsed 65 nm CMOS transceiver for short range radar applications. Four phased array transceivers were implemented in a single chip with antennas implemented in a BGA package. The implemented transmitter is capable of producing pulses of 100 ps widths (>20 GHz RF bandwidth) at a 160 GHz carrier frequency. The measured effective isotropic radiated power ( EIRP) is 18.8 dBm for continuous wave outputs. The analog beam forming receiver achieves an overall gain of 42.5 dB, -14 dBm, IP1db, 7 GHz bandwidth, and a noise figure of 22.5 dB. The sliding window time-dilation baseband relaxes the output data rate and subsequent digital processing requirements. Fine grained duty cycling reduces power dissipation. The entire chip consumes 2.2W from 1.2/1.4 V supplies in a 65 nm digital CMOS process.