A novel measurement method of the spatial carrier lifetime profile based on the OCVD technique

被引：2

作者：

Bellone, S ^{[1
]}

Licciardo, GD ^{[1
]}

Neitzert, HC ^{[1
]}

机构：

[1] Univ Salerno, Dept Informat Engn & Elect Engn, I-84084 Salerno, Italy

来源：

ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2004年

关键词：

D O I：

10.1109/ICMTS.2004.1309311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using an original test structure we show by numerical simulations that the OCVD method can be improved to obtain the spatial profile of the tau(PO), tau(NO) lifetime parameters along the epilayer of n-n+ wafers. The test structure consists of a surface diode including an additional n(+) region, where the diode is used to inject minority carriers within the epilayer, the sense region allows one to measure the diode voltage without the series resistance effect, and finally a positive voltage applied to the n(+) substrate is used to electrically control the epilayer volume where carriers recombine.

引用

页码：111 / 116

页数：6

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