A survey of heterojunction bipolar transistor (HBT) device reliability

被引：7
作者：
Livingston, H [1 ]
机构：
[1] BAE SYSTEMS Informat & Elect Warfare Syst, Component Engn, Nashua, NH 03061 USA
来源：
IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2004年 / 27卷 / 01期
关键词：
heterojunction bipolar transistors; integrated circuit reliability; semiconductor device reliability;
D O I：
10.1109/TCAPT.2004.827642
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AlGaAs HBTs present the greatest risk to military and aerospace applications due to reliability and processing problems causing long-term current gain degradation. Applications in high-temperature environments and those requiring continuous current flow are particularly vulnerable. HBT products applying newer compound semiconductor technologies have overcome the major reliability and processing problems associated with AlGaAs HBTs.
引用
收藏
页码：225 / 228
页数：4
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