Two Layer Surface Exfoliation on Si3N4/Si by Sequential Implantation of He and H Ions

被引：3

作者：

Li, Mengkai ^{[1
]}

Wang, Zhuo ^{[1
]}

Liu, Changlong ^{[1
,2
]}

Liao, Junqi ^{[1
]}

Shen, Yanyan ^{[1
]}

Zhang, Lili ^{[1
]}

Yuan, Bing ^{[1
]}

机构：

[1] Tianjin Univ, Sch Sci, Tianjin 300072, Peoples R China

[2] Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 09期

关键词：

Crystalline silicon; Si3N4; layer; He and H ion implantation; surface exfoliation; HELIUM DESORPTION; SILICON; FREQUENCY; LAYER;

D O I：

10.1007/s11664-009-0768-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

n-Type Si(100) wafers with a thermally grown Si3N4 layer (similar to 170 nm) were sequentially implanted with 160 keV He ions at a dose of 5 x 10(16) cm(-2) and 110 keV H ions at a dose of 1 x 10(16) cm(-2). Depending on the annealing temperature, surface exfoliations of two layers were observed by optical microscopy and atomic force microscopy. The first layer exfoliation was found to correspond to the top Si3N4 layer, which was produced at lower annealing temperatures. The other was ascribed to the implanted Si layer, which was formed at higher temperatures. The possible exfoliation processes are tentatively discussed, and potential applications of such phenomena are also suggested.

引用

页码：1990 / 1994

页数：5

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