Towards spectroscopy of a few silicon nanocrystals embedded in silica

被引：2

作者：

Gruen, M. ^{[1
]}

Miska, P. ^{[1
]}

Neu, E. ^{[2
]}

Steinmetz, D. ^{[2
]}

Montaigne, F. ^{[1
]}

Rinnert, H. ^{[1
]}

Becher, C. ^{[2
]}

Vergnat, M. ^{[1
]}

机构：

[1] Nancy Univ, CNRS, LPM, F-54506 Vandoeuvre Les Nancy, France

[2] Univ Saarland, Fachrichtung Tech Phys 7 3, D-66041 Saarbrucken, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 06期

关键词：

Silicon nanocrystals; Lithography; Photoluminescence spectroscopy; Single object analysis; LIGHT-EMISSION; PHOTOLUMINESCENCE; SIO2; DOT;

D O I：

10.1016/j.physe.2008.08.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work aims at optical isolation of a few silicon nanocrystals (Si-NCs) embedded in silica. We rely on realization of a SiO single layer followed by annealing under vacuum to generate Si-NCs. We first report on optimization of luminescence of single Si-NC layer in SiO2 thin him. An optimum of photoluminescence signal was found for annealing at 1050 degrees C for 95 min. Then, in order to optically isolate single Si-NCs, lithographic processes such as creation of aluminum masks have been employed. We discuss the challenges and the chances of measuring a photoluminescence signal from few Si-NCs. (C) 2008 Published by Elsevier B.V.

引用

页码：998 / 1001

页数：4

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