Atomistic Explanation of Shear-Induced Amorphous Band Formation in Boron Carbide

被引:155
作者
An, Qi [1 ]
Goddard, William A., III [1 ]
Cheng, Tao [1 ]
机构
[1] CALTECH, Mat & Proc Simulat Ctr, Pasadena, CA 91125 USA
关键词
TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; MECHANICAL-PROPERTIES; ELECTRON LOCALIZATION; RAMAN-SPECTROSCOPY; DEFORMATION; CRYSTALS; AMORPHIZATION; COMPRESSION; STRENGTHS;
D O I
10.1103/PhysRevLett.113.095501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (01 (1) over bar(1) over bar)/<(1) over bar 101 > slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.
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页数:5
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