Thermal quenching of Eu2+ emission in Ca- and Sr-Ga2S4 in relation with VRBE schemes

被引：11

作者：

Dobrowolska, A. ^{[1
,2
]}

Dierre, B. ^{[1
]}

Fang, C. M. ^{[3
]}

Hintzen, H. T. ^{[1
]}

Dorenbos, P. ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Sci Appl, Dept Radiat Sci & Technol, Mekelweg 15, NL-2629 JB Delft, Netherlands

[2] Wroclaw Univ Econ, Fac Engn & Econ, Komandorska 118-120, PL-53345 Wroclaw, Poland

[3] Brunel Univ London, BCAST, Waterside House,Cowley Business Pk, Uxbridge UB8 2AD, Middx, England

来源：

JOURNAL OF LUMINESCENCE | 2017年 / 184卷

基金：

英国工程与自然科学研究理事会;

关键词：

SrGa2S4; CaGa2S4; Thiogallate; VRBE; Thermal quenching; SINGLE-CRYSTAL GROWTH; LUMINESCENT PROPERTIES; OPTICAL-PROPERTIES; ENERGY; CE3+; PHOSPHORS; BAND; SPECTROSCOPY; STRONTIUM; CALCIUM;

D O I：

10.1016/j.jlumin.2016.12.022

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Structural and optical properties of MGa2S4 (M = Mg, Zn, Ca, Sr, Ba) compounds have been compared, and the vacuum referred binding energy (VRBE) schemes were constructed for the lanthanide ions in the iso-structural compounds CaGa2S4 and SrGa2S4 employing literature data. The VRBE of an electron in the 5d excited state of Eu2+ was found at 0.75 and 0.97 eV below the bottom of the conduction band (CB) in CaGa2S4:Eu and SrGa2S4:Eu, respectively. Such differences explains the unexpected higher thermal quenching temperature reported for Eu2+-doped SrGa2S4 (T50% = similar to 475 K) compared to Eu2+-doped CaGa2S4 (T-50% = 400 K) The significantly lower VRBE at the CB-bottom in CaGa2S4 versus SrGa2S4 may be explained by the shorter Ga-S bond lengths in SrGa2S4. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：256 / 261

页数：6

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