Relaxation and electronic surface states of rhodium surfaces

被引:12
作者
Eichler, A [1 ]
Hafner, J [1 ]
Kresse, G [1 ]
Furthmuller, J [1 ]
机构
[1] VIENNA TECH UNIV,INST THEORET PHYS,CTR COMPUTAT MAT SCI,A-1040 VIENNA,AUSTRIA
关键词
density functional calculations; low index single crystal surfaces; metallic surfaces; rhodium; surface electronic phenomena; surface energy; surface relaxation and reconstruction;
D O I
10.1016/0039-6028(95)01231-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present investigations of the structural and electronic properties of the low-index surfaces of rhodium based on selfconsistent ab initio local-density-functional calculations. Our technique is based on ultra-soft pseudopotentials, a preconditioned conjugate-gradient technique for the calculation of the electronic ground-state and of the Hellmann-Feynman forces, and a conjugate-gradient approach for the optimization of the atomic structure. For the (111), (100), and (110) surfaces inward relaxations of the top layer by -1.7 +/- 0.2, -3.8 +/- 0.2, and -9.8 +/- 0.6%, and an oscillatory decreasing relaxation of the deeper layers are predicted. A detailed analysis of electronic surface states is presented.
引用
收藏
页码:689 / 692
页数:4
相关论文
共 19 条
[1]  
DEVITA A, 1991, J PHYS-CONDENS MAT, V3, P6225, DOI 10.1088/0953-8984/3/33/002
[2]   NITROGEN ADSORPTION ON RH(110) [J].
DHANAK, VR ;
BARALDI, A ;
COMELLI, G ;
PRINCE, KC ;
ROSEI, R ;
ATREI, A ;
ZANAZZI, E .
PHYSICAL REVIEW B, 1995, 51 (03) :1965-1968
[3]  
FEIBELMAN PJ, 1983, PHYS REV B, V28, P3092, DOI 10.1103/PhysRevB.28.3092
[4]   LAPW CALCULATIONS OF RH(001) SURFACE RELAXATION [J].
FEIBELMAN, PJ ;
HAMANN, DR .
SURFACE SCIENCE, 1990, 234 (03) :377-383
[5]  
FROST DC, 1978, SURF SCI, V76, pL58
[6]   SURFACE ELECTRONIC-STRUCTURE OF RHODIUM(100) [J].
GAY, JG ;
SMITH, JR ;
ARLINGHAUS, FJ .
PHYSICAL REVIEW B, 1982, 25 (02) :643-649
[7]   SOME OBSERVATIONS ON THE USE OF RELIABILITY INDEXES IN LEED CRYSTALLOGRAPHY [J].
HENGRASMEE, S ;
MITCHELL, KAR ;
WATSON, PR ;
WHITE, SJ .
CANADIAN JOURNAL OF PHYSICS, 1980, 58 (02) :200-206
[8]   AB-INITIO MOLECULAR-DYNAMICS SIMULATION OF THE LIQUID-METAL AMORPHOUS-SEMICONDUCTOR TRANSITION IN GERMANIUM [J].
KRESSE, G ;
HAFNER, J .
PHYSICAL REVIEW B, 1994, 49 (20) :14251-14269
[9]   ABINITIO MOLECULAR-DYNAMICS FOR LIQUID-METALS [J].
KRESSE, G ;
HAFNER, J .
PHYSICAL REVIEW B, 1993, 47 (01) :558-561
[10]   AB-INITIO MOLECULAR-DYNAMICS FOR OPEN-SHELL TRANSITION-METALS [J].
KRESSE, G ;
HAFNER, J .
PHYSICAL REVIEW B, 1993, 48 (17) :13115-13118