Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

被引:311
作者
Hiramatsu, M [1 ]
Shiji, K
Amano, H
Hori, M
机构
[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Nagoya Univ, Dept Elect & Elect Engn & Informat Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
关键词
D O I
10.1063/1.1762702
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional carbon nanostructures (carbon nanowalls) were fabricated using capacitively coupled radio-frequency plasma-enhanced chemical vapor deposition assisted by H radical injection. Carbon nanowalls were grown on Si, SiO2, and sapphire substrates without catalyst, and independent of substrate materials. Correlation between carbon nanowall growth and fabrication conditions, such as carbon source gases was investigated. In the case using C2F6/H-2 system, aligned carbon nanowalls were grown vertically on the substrate, while carbon nanowalls grown using CH4/H-2 system were waved and thin (<10 nm). In the case of the deposition without H radical injection, on the other hand, carbon nanowalls were not fabricated. (C) 2004 American Institute of Physics.
引用
收藏
页码:4708 / 4710
页数:3
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