A 0-Level Packaged RF-MEMS Switched Wideband GaAs LNA MMIC

被引：0
|
作者：
Gustafsson, A. [1 ]
Samuelsson, C. [1 ]
Malmqvist, R. [1 ]
Seok, S. [2 ]
Fryziel, M. [2 ]
Rolland, N. [2 ]
Grandchamp, B. [3 ]
Vaha-Heikkila, T. [4 ]
Baggen, R. [5 ]
机构：
[1] Swedish Def Res Agcy FOI, Linkoping, Sweden
[2] IEMN, CNRS, Villeneuve, France
[3] OMMIC SAS, Limeil Brevannes, France
[4] VTT Tech Res Ctr, Espoo, Finland
[5] IMST Gmbh, Lintford, Germany
来源：
2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年
关键词：
Low noise amplifiers; MMIC; packaging; radio frequency micro-electromechanical systems; switches; 0-level package;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3 <= 24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz).
引用
收藏
页码：1403 / 1406
页数：4
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