A 0-Level Packaged RF-MEMS Switched Wideband GaAs LNA MMIC

被引：0

作者：

Gustafsson, A. ^{[1
]}

Samuelsson, C. ^{[1
]}

Malmqvist, R. ^{[1
]}

Seok, S. ^{[2
]}

Fryziel, M. ^{[2
]}

Rolland, N. ^{[2
]}

Grandchamp, B. ^{[3
]}

Vaha-Heikkila, T. ^{[4
]}

Baggen, R. ^{[5
]}

机构：

[1] Swedish Def Res Agcy FOI, Linkoping, Sweden

[2] IEMN, CNRS, Villeneuve, France

[3] OMMIC SAS, Limeil Brevannes, France

[4] VTT Tech Res Ctr, Espoo, Finland

[5] IMST Gmbh, Lintford, Germany

来源：

2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年

关键词：

Low noise amplifiers; MMIC; packaging; radio frequency micro-electromechanical systems; switches; 0-level package;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses on the design of an RF-MEMS Dicke switched wideband LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The 0-level packaged GaAs MEMS LNA circuit shows 10-17 dB of gain at 16-34 GHz when switched on. The off-state LNA gain is below -6 dB at 5-40 GHz resulting in 20-25 dB of isolation (on and off). To the authors' knowledge, this is the first time a 0-level packaged MEMS switched wideband LNA MMIC with a high gain, isolation, linearity (OIP3 <= 24 dBm) and low noise figure is presented (NF=2.5-3.0 dB at 15-26 GHz).

引用

页码：1403 / 1406

页数：4

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