Electromigration behavior in Cu/Ni-P/Sn-Cu based joint system with low current density

Although electromigration in solder joints has great influence on reliability, few study has been reported on the Cu/Ni-P/Sn-Cu based joint system electromigration with realistic current density range lower than 10 kA/cm(2). We investigated a Cu/Ni-P/Sn-0.7Cu/Ni-P/Cu joint with current densities of 5.0 and 7.5 kA/cm(2) at 423 K. Solder joint breakdown at the cathode side was detected for both stress conditions. Ni-P plating disappeared completely at the cathode side and a Cu-Sn intermetallic compound (IMC) formed at the interface. Cu-P IMC formed on the solder breakdown interface. Ni diffusion in Ni-P plating at the cathode was accelerated and the P-rich layer grew thicker than at the anode side before breaking down under electromigration stress. The P-rich layer reached the Cu electrode resulting in cracking along the interface between solder layer and Cu. Sn was diffused from the Ni3SnP IMC to the P-rich layer cracks and formed Cu3Sn IMC with the Cu electrode. Thus, the electromigration mechanism in an electroless Ni-P plating/Sn-Cu based joint system with low current density was clarified. (C) 2015 Elsevier Ltd. All rights reserved.