Synthesis of simple, low cost and benign sol-gel Cu2InxZn1-xSnS4 alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

被引:15
作者
Sui, Yingrui [1 ]
Wu, Yanjie [1 ]
Zhang, Yu [1 ]
Wang, Fengyou [1 ]
Gao, Yanbo [1 ]
Lv, Shiquan [1 ]
Wang, Zhanwu [1 ]
Sun, Yunfei [1 ]
Wei, Maobin [1 ]
Yao, Bin [2 ]
Yang, Lili [1 ]
机构
[1] Jilin Normal Univ, Minist Educ, Key Lab Funct Mat Phys & Chem, Siping 136000, Jilin, Peoples R China
[2] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
基金
中国国家自然科学基金;
关键词
SULFURIZATION TEMPERATURE; STRUCTURAL-PROPERTIES; RAMAN-SPECTROSCOPY; CU2ZNSNS4; SELENIZATION; DEPOSITION; EFFICIENCY; ABSORBER; PHASES;
D O I
10.1039/c7ra12289f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Cu2In1-xZn1-xSnS4 (x = 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol-gel method followed by a rapid annealing technique. The influence of sulfurization temperature and sulfurization time on the structure, morphology, optical and electrical properties of Cu2In1-xZn1-xSnS4 thin films was investigated in detail. The XRD and Raman results indicated that the crystalline quality of the Cu2In1-xZn1-xSnS4 alloy thin films was improved, accompanied by metal deficiency, particularly tin loss with increasing the sulfurization temperature and sulfurization time. From absorption spectra it is found that the band gaps of all Cu(2)In(1-x)Zn(1-x)SnS(4 )films are smaller than that (1.5 eV) of the pure CZTS film due to In doping, and the band gap of the Cu2In1-xZn1-xSnS4 films can be tuned in the range of 1.38 to 1.19 eV by adjusting the sulfurization temperature and sulfurization time. Hall measurement results showed that all Cu2In1-xZn1-xSnS4 alloy thin films showed p-type conductivity characteristics, the hole concentration decreased and the mobility increased with the increase of sulfurization temperature and sulfurization time, which is attributed to the improvement of the crystalline quality and the reduction of grain boundaries. Finally, the Cu2In1-xZn1-xSnS4 film possessing the best p-type conductivity with a hole concentration of 9.06 x 10(16)cm(3) and a mobility of 3.35 cm(2)V(-1)s(-i) was obtained at optimized sulfurization condition of 580 degrees C for 60 min. The solar cell using Cu2In1-xZn1-xSnS4 as the absorber obtained at the optimized sulfurization conditions of 580 degrees C for 60 min demonstrates a power conversion efficiency of 2.89%. We observed an increment in open circuit voltage by 90 mV. This work shows the promising role of In in overcoming the low V-OC, issue in Cu-kesterite thin film solar cells.
引用
收藏
页码:9038 / 9048
页数:11
相关论文
共 39 条
[1]   Discrimination and detection limits of secondary phases in Cu2ZnSnS4 using X-ray diffraction and Raman spectroscopy [J].
Berg, Dominik M. ;
Arasimowicz, Monika ;
Djemour, Rabie ;
Guetay, Levent ;
Siebentritt, Susanne ;
Schorr, Susan ;
Fontane, Xavier ;
Izquierdo-Roca, Victor ;
Perez-Rodriguez, Alejandro ;
Dale, Phillip J. .
THIN SOLID FILMS, 2014, 569 :113-123
[2]   Effect of post sulfurization temperature on the microstructure of Cu2ZnSn(S,Se)4 thin film [J].
Chen, Guilin ;
Li, Jianmin ;
Wu, Miaoju ;
Liu, Jinyang ;
Lai, Fachun ;
Zhu, Changfei .
MATERIALS LETTERS, 2015, 159 :32-34
[3]   Solvothermal Synthesis and Characterization of Chalcopyrite CuInSe2 Nanoparticles [J].
Chen, Huiyu ;
Yu, Seong-Man ;
Shin, Dong-Wook ;
Yoo, Ji-Beom .
NANOSCALE RESEARCH LETTERS, 2010, 5 (01) :217-223
[4]   XPS study of CZTSSe monograin powders [J].
Danilson, M. ;
Altosaar, M. ;
Kauk, M. ;
Katerski, A. ;
Krustok, J. ;
Raudoja, J. .
THIN SOLID FILMS, 2011, 519 (21) :7407-7411
[5]   The Role of Sulfur in Solution-Processed Cu2ZnSn(S,Se)4 and its Effect on Defect Properties [J].
Duan, Hsin-Sheng ;
Yang, Wenbing ;
Bob, Brion ;
Hsu, Chia-Jung ;
Lei, Bao ;
Yang, Yang .
ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (11) :1466-1471
[6]   The vibrational properties study of kesterite Cu2ZnSnS4 single crystals by using polarization dependent Raman spectroscopy [J].
Dumcenco, Dumitru ;
Huang, Ying-Sheng .
OPTICAL MATERIALS, 2013, 35 (03) :419-425
[7]   Effects of annealing conditions on crystallization of the CZTS absorber and photovoltaic properties of Cu(Zn,Sn)(S,Se)2 solar cells [J].
Duy-Cuong Nguyen ;
Ito, Seigo ;
Dang Viet Anh Dung .
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 632 :676-680
[8]   A 5.1% efficient kesterite Cu2ZnSnS4 (CZTS) thin film solar cell prepared using modified sulfurization process [J].
Gang, Myeng G. ;
Gurav, Kishor V. ;
Shin, Seung W. ;
Hong, Chang W. ;
Min, Jung H. ;
Suryawanshi, Mahesh P. ;
Vanalakar, Sharad A. ;
Lee, Dong S. ;
Kim, Jin H. .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6, 2015, 12 (06) :713-716
[9]   Improvement in the properties of CZTSSe thin films by selenizing single-step electrodeposited CZTS thin films [J].
Gurav, K. V. ;
Shin, S. W. ;
Patil, U. M. ;
Suryawanshi, M. P. ;
Pawar, S. M. ;
Gang, M. G. ;
Vanalakar, S. A. ;
Yun, J. H. ;
Kim, J. H. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 631 :178-182
[10]   Improved performance of Ge-alloyed CZTGeSSe thin-film solar cells through control of elemental losses [J].
Hages, Charles J. ;
Levcenco, Sergej ;
Miskin, Caleb K. ;
Alsmeier, Jan H. ;
Abou-Ras, Daniel ;
Wilks, Regan G. ;
Baer, Marcus ;
Unold, Thomas ;
Agrawal, Rakesh .
PROGRESS IN PHOTOVOLTAICS, 2015, 23 (03) :376-384