Formation of Si nanowire by atomic manipulation with a high temperature scanning tunneling microscope

被引:28
作者
Hasunuma, R
Komeda, T
Mukaida, H
Tokumoto, H
机构
[1] NATL INST ADV INTERDISCIPLINARY RES, TSUKUBA, IBARAKI 305, JAPAN
[2] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期
关键词
D O I
10.1116/1.589468
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The formation of Si nanowire during indentation of the scanning tunneling microscope tip onto the Si(111) surface was investigated by changing the sample bias, the temperature, and the tip retraction speed. The wire length at room temperature is in the order of 1 nm, however, the wire was elongated remarkably with either increasing temperature or bias voltage while keeping a positive sample bias. The wire was also elongated when the tip speed was decreased. The typical length was similar to 14 nm at 481 degrees C, +2.0 V and 320 nm/s. In order to explain these results, we proposed a simple model for the wire formation by taking into account the surface diffusion and electromigration effects. (C) 1997 American Vacuum Society.
引用
收藏
页码:1437 / 1441
页数:5
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