Photoelectron spectroscopic study of amorphous GaAsN films

被引：10

作者：

Zanatta, AR ^{[1
]}

Hammer, P

Alvarez, F

机构：

[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560250 Sao Paulo, Brazil

[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13038970 Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous gallium-arsenic-nitrogen (a-GaAsN) thin films were deposited by sputtering a crystalline GaAs target with different mixtures of argon and nitrogen. X-ray photoelectron spectroscopy (XPS) and x-ray excited Auger electron spectroscopy (XAES) were employed to study the Ga and As core levels and the corresponding LMM Auger transitions of films with different N concentrations. Chemical information of these samples was obtained through the analysis of the Auger parameter, which is exempt from problems inherent in the interpretation of XPS and XAES shifts, revealing aspects associated with the composition of the a-GaAsN films. In particular, these experimental results show the preferential bonding of N to Ga atoms in the formation of N-rich amorphous GaAsN films. (C) 2000 American Institute of Physics. [S0003-6951(00)02816-3].

引用

页码：2211 / 2213

页数：3

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