A measurement of modal gain profile and its effect on the lasing performance in vertical-external-cavity surface-emitting lasers

被引:13
作者
Kim, Jun-Youn [1 ]
Cho, Soohaeng
Lee, Junho
Kim, Gi Bum
Lim, Seong-In
Yoo, Jaeryung
Kim, Ki-Sung
Lee, Sang-Moon
Shim, Jongin
Kim, Taek
Park, Yongjo
机构
[1] Samsung Adv Inst Technol, Photon Project Team Display Device, Suwon 440600, South Korea
[2] Samsung Adv Inst Technol, Mat Lab, Suwon 440600, South Korea
[3] Hanyang Univ, Dept Elect & Comp Engn, Gyeonggi Do 425791, South Korea
关键词
external cavity lasers; high power laser; second-harmonic generation (SHG); vertical-cavity lasers;
D O I
10.1109/LPT.2006.887217
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the effect of relative wavelength difference between material gain and resonance peaks on lasing performance in vertical-external-cavity surface-emitting lasers (VECSELs). We propose a measurement method of the wavelength-dependent modal gain profiles by inserting a birefringent filter inside a cavity in order to modulate the optical loss according to the wavelength. With knowledge of the detailed gain profiles, we achieve a stable green output power of 3.3 W and a power conversion efficiency (= green output power/pump input power) of 17% in VECSEL with a LiB3O5 crystal as an intracavity frequency doubler.
引用
收藏
页码:2496 / 2498
页数:3
相关论文
共 17 条
[1]   High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser [J].
Alford, WJ ;
Raymond, TD ;
Allerman, AA .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2002, 19 (04) :663-666
[2]   INTRACAVITY DOUBLING OF CW DIODE-PUMPED ND-YAG LASERS WITH KTP [J].
ANTHON, DW ;
SIPES, DL ;
PIER, TJ ;
RESSL, MR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (04) :1148-1157
[3]   High power optically pumped semiconductor lasers. [J].
Chilla, J ;
Butterworth, S ;
Zeitschel, A ;
Charles, J ;
Caprara, A ;
Reed, M ;
Spinelli, L .
SOLID STATE LASERS XIII: TECHNOLOGY AND DEVICES, 2004, 5332 :143-150
[4]  
CHO S, UNPUB DETERMINATION
[5]   AMPLIFIED SPONTANEOUS EMISSION AND CARRIER PINNING IN LASER-DIODES [J].
CHUANG, SL ;
OGORMAN, J ;
LEVI, AFJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1631-1639
[6]   DESIGN OF FABRY-PEROT SURFACE-EMITTING LASERS WITH A PERIODIC GAIN STRUCTURE [J].
CORZINE, SW ;
GEELS, RS ;
SCOTT, JW ;
YAN, RH ;
COLDREN, LA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1513-1524
[7]   0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser [J].
Hastie, JE ;
Hopkins, JM ;
Calvez, S ;
Jeon, CW ;
Burns, D ;
Abram, R ;
Riis, E ;
Ferguson, AI ;
Dawson, MD .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (07) :894-896
[8]  
KIM JY, UNPUB EFFECT PROPERT
[9]   Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].
Kuznetsov, M ;
Hakimi, F ;
Sprague, R ;
Mooradian, A .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :561-573
[10]   Semiconductor wafer bonding via liquid capillarity [J].
Liau, ZL .
APPLIED PHYSICS LETTERS, 2000, 77 (05) :651-653