Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process

被引：1

作者：

Deng, Sunbin ^{[1
]}

Zhong, Wei ^{[1
]}

Dong, Shou-Cheng ^{[1
]}

Chen, Rongsheng ^{[1
,2
]}

Li, Guijun ^{[1
,3
]}

Zhang, Meng ^{[1
,4
]}

Yeung, Fion Sze Yan ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Peoples R China

[2] South China Univ Technol, Sch Microelect, Guangzhou 510640, Peoples R China

[3] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China

[4] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 02期

关键词：

Metal oxide; thin-film transistor; planarization; annealing; thermal budget;

D O I：

10.1109/LED.2020.3045018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work reports a method to reduce the process thermal budget in metal oxide (MO) thin-film transistors (TFTs). Using the thermal curing of a fluorinated polyimide planarization (PLN) layer as an efficient device activationprocess, thismethod eliminates the need for additional annealingsteps before the existingPLNprocessin the fabrication. Bottom-gated TFTs with indium tin oxide (ITO)-stabilized ZnO channels were fabricated by this method and exhibited improved electrical characteristics over control devices made with a higher thermal budget. A steep subthreshold swing of 82.8 mV/decade and a high on-off ratio of 1.3 x 10(10) were achieved. This improvement can be attributed to the fluorine diffusion from the PLN layer to the MO channels during the curing step. This method is useful for the cost- effective production of active-matrix flatpanel display (AM-FPD) panels and the implementation of MO TFTs on flexible substrates.

引用

页码：180 / 183

页数：4

共 21 条

[1] Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor Under Gate-Bias Stress [J].