Cu(In, Ga)Se2 thin film solar cells grown at low temperatures

被引：6
作者：
Zhang, W. [1 ,2 ]
Zhu, H. [2 ,3 ]
Zhang, L. [4 ]
Guo, Y. [2 ]
Niu, X. [2 ]
Li, Z. [2 ]
Chen, J. [2 ]
Liu, Q.
Mai, Y. [2 ,3 ]
机构：
[1] Anhui Polytech Univ, Coll Mech & Automot Engn, Wuhu 241000, PR, Peoples R China
[2] Hebei Univ, Inst Photovolta, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
[3] Jinan Univ, Inst New Energy Technol, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China
[4] Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Tianjin 300071, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2017年 / 132卷
基金：
中国国家自然科学基金;
关键词：
Polyimide; Soda lime glass; CIGS; Solar cells; XRD; SUBSTRATE-TEMPERATURE; CU(IN; GA)SE-2; EFFICIENCIES; NAF;
D O I：
10.1016/j.sse.2017.03.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cu(In, Ga)Se-2(CIGS) thin film solar cells were grown on polyimide (PI) and soda lime glass (SLG) substrates at low substrate temperatures between 400 degrees C and 500 degrees C. Different material properties of the CIGS thin films and photovoltaic performances of the solar cells were systematically investigated. It is found that the (112), (220)/(204) and (116)/(312) peaks from X-ray diffraction (XRD) patterns show double-peak patterns as the substrate temperature decreases. The CIGS thin films grown on both PI and SLG substrates shows layered structures. The bottom and surficial layers of CIGS thin films display small size polycrystalline grains while the middle layers show large size polycrystalline grains. Both types of CIGS thin film solar cells exhibit similar efficiencies while CIGS thin film solar cells grown on PI substrates show lower open circuit voltage and fill factor but higher short circuit current density, as compared to those of CIGS thin film solar cells on SLG substrates. The highest efficiency of 6.14% has been achieved for the CIGS thin film solar cells on PI with the structure of PI/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid here. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：57 / 63
页数：7
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