Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization

被引：108
|
作者：
Korte, L. [1 ]
Conrad, E. [1 ]
Angermann, H. [1 ]
Stangl, R. [1 ]
Schmidt, M. [1 ]
机构：
[1] Helmholtz Zentrum Berlin Mat & Energie, D-12489 Berlin, Germany
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期
关键词：
Silicon; Heterojunction; High efficiency; Amorphous silicon; STATES;
D O I：
10.1016/j.solmat.2008.10.020
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Our progress in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction solar cell technology and Current understanding of fundamental device physics are presented. In a-Si:H/c-Si cells, device performance is strongly dependent on the quality of the a-Si:H/c-Si heterojunction. Four topics are crucial to minimize recombination at the junction and thereby maximize cell efficiency: wet-chemical pre-treatment of the c-Si surface prior to a-Si:H deposition: optimum a-Si:H doping: thermal and plasma post-treatments of the a-Si:H/c-Si structure. By optimizing these aspects using specifically developed characterization methods, we were able to realize (n)a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si cells with up to 18.5% and 19.8% efficiency, respectively. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：905 / 910
页数：6
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