High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process

被引：53

作者：

Li, Zhe ^{[1
]}

Cheng, Yanan ^{[1
]}

Xu, Yu ^{[1
]}

Hu, Zhuangzhuang ^{[1
]}

Zhu, Weidong ^{[1
]}

Chen, Dazheng ^{[1
]}

Feng, Qian ^{[1
]}

Zhou, Hong ^{[1
]}

Zhang, Jincheng ^{[1
]}

Zhang, Chunfu ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 12期

关键词：

Solar-blindp hotodetector; Ga2O3 Schottky barrier photodiode; carriermultiplication; record detectivity; ultrahigh gain; SEPARATE ABSORPTION; PHOTODETECTORS;

D O I：

10.1109/LED.2020.3032290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate a high performance lateral beta-Ga2O3 solar-blind Schottky barrier photodiode (SBPD) with record detectivity (D*) and ultrahigh gain via carrier multiplication process. Due to the strong electric field, the carriers generated under the 254 nm light illumination undergo acceleration and impact ionization, contributing to the internal carrier multiplication process. Therefore, the photodetector (PD) is equipped with record D* of 2x10(16) Jones and ultrahigh gain of 1.7 x 10(4), combining with a high photo-to-dark-current ratio ofmore than 10(5), a responsivity of 1.2x10(5) A/W and a large external quantum efficiencyof 5.6x10(5)%. Without the requirement of complex device structure like other avalanche PDs, our SBPD can be used as a low-cost and easy-to-integrate technology to prepare high performance solar-blind PDs.

引用

页码：1794 / 1797

页数：4

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