Comparison of techniques to measure the point spread function due to scatter and flare in EUV lithography systems

被引：16

作者：

Chandhok, M ^{[1
]}

Lee, SH ^{[1
]}

Krautschik, C ^{[1
]}

Zhang, GJ ^{[1
]}

Rice, BJ ^{[1
]}

Goldstein, M ^{[1
]}

Panning, E ^{[1
]}

Bristol, R ^{[1
]}

Stivers, A ^{[1
]}

Shell, M ^{[1
]}

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VIII | 2004年 / 5374卷

关键词：

EUV; flare; FVC; PSF; Point Spread Function; scatter; MTF; ETS;

D O I：

10.1117/12.535995

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The source of flare in EUVL systems is mostly from the mid-spatial frequency roughness (1 /mum - 1 /mm spatial periods) of mirrors. Due to the challenges in polishing mirrors to a small. fraction of the wavelength, flare in EUV lithography tools is expected to be greater than flare in current DUV tools. Even though EUV flare is constant across the field, there can be within-die flare variations due to variations in layout density. Hence, it is expected that to meet the CD control requirements for the 32 nm node, Flare Variation Compensation (FVC), akin to Optical Proximity Correction (OPC) would be required. FVC needs the within-die flare level estimated by convolving the Point Spread Function due to scatter (PSFsc) with the mask layout. Thus, accurate knowledge of the system PSFsc is essential for FVC. Experimental results of the Modulation Transfer Function (MTF) technique to estimate flare and the PSFsc of the Engineering Test Stand (ETS) are presented. It was also determined that due to the nature of the PSFsc in EUVL tools a more accurate measure for flare would be to use the 0.5 mum line as opposed to the current 2 mum line standard for measuring flare on DUVL tools.

引用

页码：854 / 860

页数：7

共 9 条

[1]

CHANDHOK M, IN PRESS JVST B

[2]

Goodman J.W., 1996, Opt. Eng, V35, P1513, DOI DOI 10.1016/J.APSUSC.2017.08.033

[3]

GRASSMANN A, 1992, J VAC SCI TECH B, P3008

[4]

KIRK JP, 1994, P SOC PHOTO-OPT INS, V2197, P566, DOI 10.1117/12.175451

[5] Implementing flare compensation for EUV masks through localized mask CD resizing [J].

Krautschik, C ;

Chandhok, M ;

Zhang, GJ ;

Lee, S ;

Goldstein, M ;

Panning, E ;

Rice, B ;

Brist, R ;

Singh, V .

EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 :58-68

[6] Analysis of flare and its impact on Low-k1 KrF and ArF lithography [J].

La Fontaine, B ;

Dusa, M ;

Acheta, A ;

Chen, C ;

Bourov, A ;

Levinson, H ;

Litt, LC ;

Mulder, M ;

Seltman, R ;

Van Praagh, J .

OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 :44-56

[7] Lithographic flare measurements of EUV full-field projection optics [J].

Lee, SH ;

Naulleau, P ;

Krautschik, C ;

Chandhok, M ;

Chapmad, HN ;

O'Connell, DJ ;

Goldstein, M .

EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 :103-111

[8] Lithographic evaluation of the EUV Engineering Test Stand [J].

Lee, SH ;

Tichenor, DA ;

Ballard, WP ;

Bernardez, LJ ;

Goldsmith, JEM ;

Haney, SJ ;

Jefferson, KL ;

Johnson, TA ;

Leung, AH ;

O'Connell, DJ ;

Replogle, WC ;

Wronosky, JB ;

Blaedel, K ;

Naulleau, P ;

Goldberg, KA ;

Gullikson, EM ;

Chapman, HN ;

Wurm, S ;

Panning, E ;

Yan, PY ;

Zhang, GJ ;

Bjorkholm, JE ;

Kubiak, GD ;

Sweeney, DW ;

Attwood, D ;

Gwyn, CW .

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 :266-276

[9] Measuring and modeling flare in optical lithography [J].

Mack, CA .

OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3, 2003, 5040 :151-161

← 1 →