4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width

被引：16

作者：

Tao, Li ^{[1
]}

Yuan, Lijun ^{[2
]}

Li, Yanping ^{[1
]}

Yu, Hongyan ^{[2
]}

Wang, Baojun ^{[2
]}

Kan, Qiang ^{[2
]}

Chen, Weixi ^{[1
]}

Pan, Jiaoqing ^{[2
]}

Ran, Guangzhao ^{[1
]}

Wang, Wei ^{[2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1364/OE.22.005448

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed feedback gratings based on selective-area metal bonding technology. The lasers have emission peaks between 1539.9 and 1546.1 nm with a wavelength spacing of about 2.0 nm. The single laser has a typical threshold current of 50 mA and side-mode suppression ratio of 20 dB. The silicon waveguides are fabricated simply by standard photolithography and holographic lithography which are CMOS compatible. (C) 2014 Optical Society of America

引用

页码：5448 / 5454

页数：7

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