Analysis of hole transport in a polyfluorene-based copolymer- evidence for the absence of correlated disorder

被引：38

作者：

de Vries, R. J. ^{[1
,2
,3
,4
]}

van Mensfoort, S. L. M. ^{[1
,2
,4
]}

Shabro, V. ^{[4
]}

Vulto, S. I. E. ^{[4
]}

Janssen, R. A. J. ^{[1
,2
]}

Coehoorn, R. ^{[1
,2
,4
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys Mol Mat, NL-5600 MB Eindhoven, Netherlands

[2] Eindhoven Univ Technol, Nanosyst Grp, NL-5600 MB Eindhoven, Netherlands

[3] Dutch Polymer Inst, NL-5600 AX Eindhoven, Netherlands

[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

hole mobility; organic semiconductors; polymer blends; CHARGE-TRANSPORT; MOBILITY;

D O I：

10.1063/1.3119317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The presence of spatial correlation between the disordered transport site energies in semiconducting polymers used in organic electronic devices is known to affect the mobility. However, it is not established whether such a correlation is present in relevant polymers. We study hole transport in a polyfluorene-based copolymer and provide evidence for the absence of spatially correlated disorder in this material, based on an analysis of the current-voltage characteristics of sandwich-type devices. Distinguishing correlated from uncorrelated disorder, which we achieve on the basis of the hopping site density, is shown to be highly relevant for the development of quantitative device models.

引用

页数：3

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